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Sputtering as a tool to determine graphene doping level – computer simulations.

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Scientific supervisor

Name prof. dr hab. Zbigniew Postawa
Department Physics of Nanostructures and Nanotechnology
Laboratory Computer Surface Science
Group webpage

Short description

Two-dimensional (2D) materials are currently the subject of intense research due to their unique optical and electronic properties. The ability to fine-tune the conductivity of semiconductors by controlled doping with, e.g., boron atoms is considered one of the pillars of chip manufacturing technology. While accurate measurement of this doping is relatively well known for 3D systems, it is still one of the unresolved issues for 2D systems due to the very weak signal.

The work will be associated with the analysis of previously obtained simulation data. The work's scientific aim is to investigate if the number of neutral atoms emitted from graphene bombarded by C60 projectiles can be used as metrics to determine the amount of boron doping of this layer. For this purpose, it will be necessary to investigate the relationship between the number of emitted boron atoms and a doping level. During the internship, one will be able to perform computer simulations on supercomputer systems and learn about the techniques of three-dimensional visualization of computer simulation results (graphics and 3D animations).

Scheme of the modeled system - boron-doped graphene

Main research tools

  • Molecular Dynamics computer simulations (MD) – LAMMPS software

Additional requirements to the candidate

  • basic computer skills
  • basic knowledge of any data analysis program (e.g., SigmaPlot, Excel)

Possibility to continue student internship in the form of:

  • Diploma thesis (master's or bachelor's degree): Yes
  • PhD study: Yes